7.16. Shallow trench isolation

Deep Trench Isolation technology involves a large increase of the total Si/SiO2 interface area into the pixel. This may cause a degradation of the pixel dark ...

Deep trenches, usually with a depth larger than a couple of micrometers, are mainly used to isolate different devices and device groups (wells) in CMOS/ BiCMOS ...

Typical isolation technique consists of a combination of junction isolation and local oxidation of silicon (LOCOS). More recently, however, LOCOS isolation is ...

The deep trenches are filled with dielectric materials, which may include an oxide, to isolate the neighboring devices from each other. The image sensors in the ...

A method for making a deep trench isolation of a CIS device includes: growing a first epitaxial layer on a substrate; forming a hard mask layer on the first ...

The improved process thickens the isolation oxide and rounds sharp silicon corners at their weak points, increasing the applied voltage by 15–20 V at the same ...

A polysilicon stress-relief layer [5] is deposited so that it fills the deep trench and is recessed below the silicon surface. The deep trench process ...

DTI, or Deep Trench Isolation, is a technique used in the manufacturing of semiconductor devices to electrically isolate different regions of a silicon ...