Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field. Giant magnetoresistance · Tunnel magnetoresistance · Colossal magnetoresistance
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ...
The magnetoresistance sensor may use one of the following magnetotransport mechanisms: classical magnetoresistance (MR) or quantum MR effects. In the classical ...
TMR sensors more accurately measure the full dynamic range. These sensors have excellent working dynamic range, with high linearity, low hysteresis, and high ...
Hall-effect sensing elements generate a voltage that is proportional to the magnitude of a nearby magnetic field. Hall sensor technology is an application of ...
MR sensors are used to transfer the variation of the target magnetic fields to other signals such as resistance change. This review illustrates the progress of ...
The AMR sensing element changes its electrical resistance in response to the magnetic flux density through it. It operates on either a 3.3 V or 5 V supply ...
They detect changes, or disturbances in magnetic fields that have been created or modified by objects or events. The magnetic fields may therefore carry ...
