VIII.Magnetoresistance

The effect manifests itself as a significant decrease (typically 10–. 80%) in electrical resistance in the presence of a magnetic field. The effect is exploited.

Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic ...

Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field. Giant magnetoresistance · Tunnel magnetoresistance · Colossal magnetoresistance

The paper presents the results of studies of the magnetoresistance effect and magnetic parameters of three-component film alloys.

Experiments show that the application of a magnetic field increases the resistivity of a semiconductor and produces a decrease in the magnitude of the Hall ...

The phenomenon of the change of conductivity by the applied magnetic field is generically called a magnetoresistance effect. The contents are divided into the ...

The anisotropic magnetoresistance (AMR) effect results in electrical conductivity that depends on the magnetization orientation and the current ...

Conventional magnetoresistance in doped semiconductors is straightforwardly explained as the effect of the Lorentz force on the carrier motion, ...

These sensors can measure fields of less than 10−3 A/m up to several 104 A/m, i.e., much lower fields than normal Hall sensors. The relation between magnetic ...

Magnetoresistance (MR) is an important spintronic phenomenon characterized by a change in the resistance of a material upon exposed to a magnetic field.