Magnetoresistive RAM

Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field.

Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains.

Magnetoresistivity is the ability of a material to change resistance under the influence of magnetic fields. There are several different magnetoresistive ...

有件可在3 - 4 個工作日內出貨. 新增. 最少：1 / 多個：1. 價格：Each (Supplied on Cut Tape). 條帶式包裝. 1+. NT$77.640. 10+. NT$57.050. 50+. NT$56.640. 其他價格.

購買Anisotropic Magneto Resistive (AMR) Magnetoresistive Sensors。 e絡盟台灣提供優惠價格、當天發貨，快速交付、庫存充足、資料表與技術支援。

This element is mainly used for detection of gear rotation. Semiconductor magnetoresistive element MS product family comprises the back bais holder built-in ...

磁電組感測器Magnetoresistive sensors. Magnetoresistive sensors are used to measure small changes in magnetic fields. HL-Planartechnik GmbH provides ...

Honeywell Magnetoresistive Sensor ICs are durable and reliable sensors for large air gaps or small magnetic field applications.

A magnetoresistive sensor uses the fact that the electrical resistance in a ferromagnetic thin film alloy is changed through an external magnetic field. “Ferrum ...

They detect changes, or disturbances in magnetic fields that have been created or modified by objects or events. The magnetic fields may therefore carry ...